View SA25F020LEM8_4921167.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Features
*= *= *= Saifun NROMTM Flash Cell Serial Peripheral Interface (SPI) Compatible, Supports SPI Modes 0 (0,0) and 3 (1,1) Page Program Operation: 1024 pages (256 Bytes/Page) Single Page Rewrite Cycle (Erase and Program) in 10ms Typical Page Program Mode (up to 256 bytes) in 8ms Typical Page Erase (256 bytes) in 3 ms Sector Erase (512 Kb) in 0.5 s Bulk Erase (2 Mb) Single Supply Voltage: 2.7 V to 3.6 V 25MHz Clock Rate Block Write Protection: Protect Quarter, Half or Entire Array Write Protect Pin and Write Disable Instructions of Both Hardware and Software Data Protection 100,000 Erase Cycles (Minimum) More than 20-Year Data Retention Low-power Standby Current (less than 1A) 8-SOIC Narrow Package MLF Leadless Package Temperature Range: Industrial: -40C to +85C Commercial: 0C to +70C
- -
*= *= *= *= *= *= *= *= *= *= *= *= *= *=
SA25F020 Advanced Information
2Mb Serial Flash with 25MHz SPI Bus Interface
- -
http://www.saifun.com Saifun NROMTM is a trademark of Saifun Semiconductors Ltd.
This Data Sheet states Saifun's current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 1986 Rev: 1 Issue Date: 24 July 2003
Amendment: 0
SA25F020 Advanced Information SAIFUN
2
General Description
The SA25F020 is a 2Mb (512K X 4) CMOS non-volatile serial Flash Memory. This device fully conforms to the SPI 4-wire protocol, is enabled through the Chip Select (CSb) pin, and uses Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data transfer between the SPI microcontroller and the Serial FLASH memory. The memory can be programmed from 1 up to 256 bytes at a time via the Page Program (PP) instruction. The memory is organized into four sectors. Each sector contains 256 pages, with each page being 256 bytes wide. The entire memory can therefore be viewed as consisting of 1024 pages, or 262,144 bytes. The memory can be erased in one of the following ways: *= 256 bytes at a time, using the Page Erase (PE) instruction *= 512 Kb at a time, using the Sector Erase (SE) instruction *= 2 Mb at a time, using the Bulk Erase (BE) instruction Each device requires only a 3.0V power supply (2.7 V to 3.6 V) for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The SA25F020 does not require a VPP supply.
The HOLDb pin may be used to suspend any serial communication without resetting the serial sequence. In addition, the serial interface allows a minimal-pin-count packaging designed to simplify PC board layout requirements and offers the designer a variety of low-voltage and low-power options. The SA25F020 is available in a space-saving, 8-lead narrow SOIC package The SA25F020 is part of the SPI Flash and EEPROM family. It is designed to work with any SPI-compatible, high-speed microcontroller, and offers both hardware (WPb pin) and Software ("block protect") data protection. For example, programming a 2-bit code into the status register prevents program with top 1/4, top 1/2 or entire array write protection and enables block write protection. Separate program enable and program disable instructions are provided for additional data protection. Hardware data protection is provided via the WPb pin to protect against inadvertent write attempts to the status register. Saifun's SPI Serial Flash products are designed and tested for applications requiring high endurance and low power consumption for a continuously reliable non-volatile solution for all markets.
SA25F020 Advanced Information SAIFUN
3
Table of Contents
Features ......................................................................... 1 General Description ...................................................... 2 Memory Organization.................................................... 5 Connection Diagrams ................................................... 6 Ordering Information .................................................... 7 Product Specifications ................................................. 8 Absolute Maximum Ratings..................................... 8 ESD/Latch Up Specification (JEDEC 8 Spec) ......... 8 Operating Conditions............................................... 8 DC Characteristics ........................................................ 9 AC Test Conditions ..................................................... 10 Timing Diagrams ......................................................... 11 Signal Description....................................................... 13 Chip Select (CSb).................................................. 13 Serial Clock (SCK) ................................................ 13 Serial Input (SI) ..................................................... 13 Serial Output (SO)................................................. 13 Hold (HOLDb)........................................................ 13 Write Protect (WPb) .............................................. 13 Serial Interface Description ........................................ 14 SPI Modes ............................................................ 14 Master ........................................................... 14 Slave ............................................................. 14 Transmitter/Receiver ..................................... 14 Serial Opcode................................................ 14 Invalid Opcode .............................................. 14 Chip Select (CSb).......................................... 15 Hold Condition............................................... 15 Write Protect ................................................. 16
Functional Description ............................................... 17 Instructions............................................................ 17 Read Status Register (RDSR) ............................... 18 Write Enable (WREN) ........................................... 20 Write Disable (WRDI)............................................ 20 Write Status Register (WRSR) .............................. 21 Read Data Bytes (READ) ...................................... 23 Fast Read (FAST_READ) ..................................... 24 Page Programming (PP) ....................................... 25 Page Erase (PE)................................................... 27 Sector Erase (SE) ................................................. 28 Bulk Erase (BE)..................................................... 29 Software Protection (SP)/ Deep Powerdown (DP) . 30 Release from Software Protect (RES) ................... 31 Release from Software Protection and Read Electronic Signature (RES).................................... 32 Powerup and Powerdown ...................................... 33 Physical Dimensions................................................... 34 Contact Information .................................................... 37 Life Support Policy...................................................... 37
SA25F020 Advanced Information SAIFUN
4
List of Figures
Figure 1. SA25F020 Block Diagram ................................ 5 Figure 2. SOIC 8 (150 mil)/PDIP/MLF Package (Top View) ............................................................. 6 Figure 3. SA25F020 Ordering Information....................... 7 Figure 4. SPI Mode 0 (0,0) Input Timing........................ 11 Figure 5. SPI Mode 0 (0,0) Output Timing ..................... 11 Figure 6. AC Measurements I/O Waveform................... 12 Figure 7. Supported SPI Modes .................................... 14 Figure 8. Hold Condition................................................ 15 Figure 9. SPI Serial Interface ........................................ 17 Figure 10. Read Status Register (RDSR) Instruction Sequence ............................................................ 19 Figure 11. Write Enable (WREN) Instruction Sequence 20 Figure 12. Write Disable (WRDI) Instruction Sequence. 20 Figure 13. Write Status Register (WRSR) Instruction Sequence ............................................................ 22 Figure 14. Read (READ) Instruction Sequence ............. 23 Figure 15. Fast Read (FAST_READ) Instruction Sequence ............................................................ 24 Figure 16. Page Programming (PP) Instruction Sequence ............................................................ 26 Figure 17. Page Erase (PE) Instruction Sequence ........ 27 Figure 18. Sector Erase (SE) Instruction Sequence ...... 28
Figure 19. Bulk Erase (BE) Instruction Sequence.......... 29 Figure 20. Software Protection Instruction Sequence .... 30 Figure 21. Release from Software Protect (RES) Instruction Sequence ............................................................ 31 Figure 22. Release from Software Protection and Read Electronic Signature (RES) Instruction Sequence 32 Figure 23. 8-pin SOIC Package..................................... 34 Figure 24. 8-pin MLF Leadless Package ....................... 35 Figure 25. Molded Dual-in-line Package (N) Package Number N08E...................................................... 36
List of Tables
Table 1. Memory Organization ........................................ 5 Table 2. Pin Names......................................................... 6 Table 3. DC Characteristics............................................. 9 Table 4. AC Test Conditions.......................................... 10 Table 5. AC Measurements........................................... 12 Table 6. Instruction Set ................................................. 17 Table 7. Status Register Format.................................... 18 Table 8. Read Status Register Definition....................... 18 Table 9. Block Write Protect Bits................................... 21 Table 10. WPBEN Operation ........................................ 21 Table 11. Powerup ........................................................ 33
SA25F020 Advanced Information SAIFUN
5
Memory Organization
The memory is organized in the following manner: *= 262,144 bytes (8 bits each) *= 4 sectors (512 Kb, 65,536 bytes each), as shown in Table 1 *= 1024 pages (256 bytes each)
Each page can be individually programmed, with the bits programmed from 1 to 0. The SA25F020's memory can be erased via the Page, Sector or Bulk Erase commands, with the bits erased from 0 to 1.
Table 1. Memory Organization
Sector 3 2 1 0 Address Range 30000h 20000h 10000h 00000h 3FFFFh 2FFFFh 1FFFFh 0FFFFh
SRAM
PS
Array - L Logic
X D E C
Array - R
RD
DATA PATH
IO HOLDb
GND
Figure 1. SA25F020 Block Diagram
WPb
SCK
CSb
Vcc
SO
SI
SA25F020 Advanced Information SAIFUN
6
Connection Diagrams
CSb SO WPb GND 1 2 SA25F020 3 4 6 5 SCK SI 8 7 VCC HOLDb
Figure 2. SOIC 8 (150 mil)/PDIP/MLF Package (Top View) Table 2. Pin Names
Pin Name CSb SCK SI SO GND VCC WPb HOLDb Signal Name Chip Select Serial Data Clock Serial Data Input Serial Data Output Ground Power Supply Write Protect Suspend Serial Input
SA25F020 Advanced Information SAIFUN
7
Ordering Information
SA 25 F XX L E PP F X Letter
Blank X Blank F Package N M8 MLF
Description
Tube Tape and Reel Non-lead Free Lead Free 8-pin DIP 8-pin SOIC (150 mil) 8-lead MLF
Temp. Range
Blank E L
0 to 70 C o -40 to +85 C 2.7 V to 3.6 V
o
Voltage Operating Range
Density
020 F
2 Mb with Write Protect Flash SPI-2 Wires Saifun Non-Volatile Memory
Interface
25 SA
Figure 3. SA25F020 Ordering Information
SA25F020 Advanced Information SAIFUN
8
Product Specifications
Absolute Maximum Ratings
Storage Temperature All input or output voltages with respect to Ground Lead Temperature (Soldering, 10 seconds) ESD Rating -65 C to +150 C 4.5 V to -0.3 V +235 C 2000 V min.
ESD/Latch Up Specification (JEDEC 8 Spec)
Human Body Model Machine Model Charge Device Model Latch Up Minimum 4 KV Minimum 500 V Minimum 1 KV 100 mA on all pins +125C
Operating Conditions
Operating Temperature: SA25F020 SA25F020E Positive Power Supply: SA25F020 0 C to +70 C -40 C to +85 C 2.7 V to 3.6 V
SA25F020 Advanced Information SAIFUN
9
DC Characteristics
Applicable over recommended operating range from TAI = -40 C to 85 C, VCC = 2.7-3.6 V.
Table 3. DC Characteristics
Symbol Parameter Test Conditions Limits Min 2.7 SCK = 0.1VCC/0.9 VCC @ 25 MHz CSb = VCC CSb = VCC CSb = VCC CSb = VCC VCC = 3.0 V, CSb = VCC VIN = GND to VCC VIN = GND to VCC -0.3 0.7 VCC IOH = -0.1 mA IOL = 1.6 mA; VCC = 2.7 V VCC 0.2 0.4 Typ* 3 Max 3.6 Unit
VCC
Supply Voltage Active Power Supply Current (Read) Active Power Supply Current (Page Program) Active Power Supply Current (WRSR) Active Power Supply Current (SE) Active Power Supply Current (BE) Standby Current Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output High Voltage Output Low Voltage
V
ICC1 ICC2 ICC3 ICC4 ICC5 ISB IIL IOL VIL VIH VOH VOL
9
12 15 15 15 15 1 1 1 0.3 VCC VCC + 0.5
mA mA mA mA mA A A A V V V V
*Typical values are at TAI = 25 C and 3 V.
SA25F020 Advanced Information SAIFUN
10
AC Test Conditions
Table 4. AC Test Conditions
Symbol FSCK tCRT tCFT tWH tWL tCS tCSS tCSH tHD tCD tV tHO tHD:DAT tSU:DAT tLZ tHZ
** ** ** **
Parameter SCK Clock Frequency Clock Rise Time (Slew Rate) Clock Fall Time (Slew Rate) SCK High Time SCK Low Time CSb High Time CSb Setup Time CSb HOLD Time HOLDb Setup Time HOLDb Hold Time Output Valid Output Hold Time Data in Hold Time Data in Setup Time HOLDb to Output Low Z HOLDb to Output High Z Output Disable Time Write Protect Setup Time Write Protect Hold Time 256-byte Page Programming Page Erase and Programming Page Erase Time Sector Erase Time Bulk Erase Time Release SP Mode
25 MHz Min D.C. 0.1 0.1 18 18 100 10 10 10 10 0 0 5 5 15 20 15 20 100 8 10 3 0.5 2 100K 10 15 6 0.8 3 1000 15 Typ Max 25
Unit MHz V/ns V/ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ms sec sec ns Erase cycles
** **
** tDIS ** tWPS ** tWPH
tPP* tEP* tPE tSE tBE tRES Endurance
* 256 bytes in the checkerboard programming formation.
** Value guaranteed by characterization, not 100% tested in production
SA25F020 Advanced Information SAIFUN
11
Timing Diagrams
All timing diagrams are based on SPI protocol modes 0 and 1.
tCS
CS
tCSH tCSS tCSH tCSS
SCK
tSU:DAT tHD:DAT tCRT tCFT LSB IN
SI
MSB IN
SO
High Impedance
Figure 4. SPI Mode 0 (0,0) Input Timing
CS
tWH
SCK
tV tHO tV tHO tWL LSB OUT tDIS
SO
Figure 5. SPI Mode 0 (0,0) Output Timing
SA25F020 Advanced Information SAIFUN
12
Input Levels 0.8Vcc
Input and Output Timing Reference Levels 0.7Vcc
0.2Vcc
0.3Vcc
Figure 6. AC Measurements I/O Waveform Table 5. AC Measurements
Symbol CL Parameter Load Capacitance Input Rise and Fall Times Input Pulse Voltage Input and Output Timing Reference Voltages Min 30 5 0.2 VCC to 0.8 VCC 0.3 VCC to 0.7 VCC Max Unit pF ns V V
SA25F020 Advanced Information SAIFUN
13
Signal Description
Chip Select (CSb)
This is an active-low input pin to the device that is generated by the master controlling the device. A low level on this pin selects the device, while a high level deselects the device. All serial communications with the device are enabled only when this pin is held low.
Serial Output (SO)
This is an output pin from the device that is used to transfer output data to the controlling master. Output data is serially shifted out on this pin after the falling edge of the SCK.
Hold (HOLDb)
This is an active low input pin to the device that is generated by the master controlling the device. When driven low, this pin suspends any current communication with the device. The suspended communication can be resumed by driving this pin high. This feature eliminates the need to re-transmit the entire sequence by enabling the master to resume the communication from where it was left off. This pin should be tied high if this feature is not used. Refer to Hold Condition, page 15, for additional details.
Serial Clock (SCK)
This is an input pin to the device that is generated by the master controlling the device. It is a clock signal that synchronizes the communication between a master and the device. All input information (SI) to the device is latched on the rising edge of this clock input, while output data (SO) from the device is driven after the falling edge of this clock input.
Serial Input (SI)
This is an input pin to the device that is generated by the master controlling the device. The master transfers input information (instruction, addresses and the data to be programmed) into the device serially via this pin. This input information is latched on the rising edge of the SCK.
Write Protect (WPb)
This is an active low input pin to the device. This pin allows enabling and disabling of writes to the device's memory array and status register. When this pin is held low, writes to the memory array and status register are disabled; when it is held high, they are enabled. Refer to Write Protect, page 16, for additional details.
SA25F020 Advanced Information SAIFUN
14
Serial Interface Description
SPI Modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of the two following modes: *= CPOL=0, CPHA=0 *= CPOL=1, CPHA=1
CPOL 0 1 CPHA 0 1 CS CS
In both of these modes, input data is latched on the rising edge of SCK, and output data is available from the falling edge of SCK. The difference between the two modes, as shown in Figure 7, is the clock polarity when the bus master is in Standby mode and is not transferring data, as follows: *= SCK remains at 0 for CPOL = 0, CPHA = 0 *= SCK remains at 1 for CPOL = 1, CPHA = 1
SO SI
MSB MSB
Figure 7. Supported SPI Modes
Master The device that generates the SCK. Slave As the SCK pin is always an input, the SA25F020 always operates as a slave. Transmitter/Receiver The SA25F020 has separate pins designated for data transmission and reception.
Serial Opcode The first byte is received after the device is selected. This byte contains the opcode that defines the operation to be performed (for more details, refer to Table 6, page 17). Invalid Opcode If an invalid opcode is received, no data is shifted into the SA25F020, and the serial output pin remains in a high impedance state until a CSb falling edge is detected again, which reinitializes the serial communication.
SA25F020 Advanced Information SAIFUN
15
Chip Select (CSb) The SA25F020 is selected when the CSb pin is low. When the device is not selected, data is not accepted via the SI pin, and the SO pin remains in a high impedance state. Hold Condition The HOLDb pin is used in conjunction with the CSb pin to select the SA25F020. When the device is selected and a serial sequence is underway, HOLDb can be used to pause the serial communication with the master device without resetting the serial sequence. To enter the hold condition the device must be selected, with CSb low.
As shown in Figure 8, the Hold condition starts on the falling edge of the HOLDb signal, provided that SCK is low. The Hold condition ends on the rising edge of the HOLDb signal, provided that SCK is low. If the falling edge does not coincide with SCK being low, the Hold condition starts only after SCK next goes low. Similarly, if the rising edge does not coincide with SCK being low, the Hold condition ends only after SCK next goes low. During the Hold condition, SO is high impedance, and SI and SCK are Don't Care. In most cases, the device is kept selected, with CSb driven low, for the entire duration of the Hold condition, which ensures that the internal logic state remains unchanged from the moment it enters the Hold condition.
NOTE:
Driving CSb high while HOLDb is still low is not a legal operation.
SCK HOLD
Hold Condition (Standard Use)
Hold Condition (Non-Standard Use)
Figure 8. Hold Condition
SA25F020 Advanced Information SAIFUN
16
Write Protect The WPb pin enables write operations to the status register when held high. When the WPb pin is brought low and the WPBEN bit is 1, all write operations to the status register are inhibited (for more details, refer to Table 10, page 21). If WPb goes low while CSb is still low, the write to the status register is interrupted. If the internal write cycle has already been initiated, WPb going low has no effect on any write operations to the status register. The WPb pin function is blocked when the WPBEN bit in the status register is 0, which enables the user to install the SA25F020 in a system with the WPb pin tied to ground but still able to write to the status register. All WPb pin functions are enabled when the WPBEN bit is set to 1.
SA25F020 Advanced Information SAIFUN
17
Functional Description
Instructions
Figure 9 presents a schematic diagram of the SA25F020's SPI serial interface.
MASTER: MICROCONTROLLER DATA OUT DATA IN SERIAL CLOCK SSO SS1 SS2 SS3 SLAVE SA25F020 SI SO SCK CSb
The SA25F020's SPI consists of an 8-bit instruction register that decodes a specific instruction to be executed. Thirteen different instructions (called opcodes) are incorporated in the device for various operations. Table 6 lists the instruction set and the format for proper operation. All opcodes, array addresses and data are transferred in an MSB-first-LSB-last fashion. Detailed information about each of these opcodes is provided for the individual instruction descriptions in the sections that follow.
Table 6. Instruction Set
SI SO SCK CSb
Instruction Name WREN WRDI
Instruction Format 0000 0110 0000 0100 0000 0101 0000 0001 0000 0011 0000 1011 0000 0010 1000 0001 1101 1000 1100 0111 1011 1001 1010 1011
Operation Set Write Enable Latch Reset Write Enable Latch Read Status Register Write Status Register Read Data from Memory Array Read Data from Memory Array Write Data to Memory Array Page Erase Sector Erase Bulk Erase Software Protect Release from Software Protect Mode Release from Software Protect + Read ID Read ID
SI SO SCK CSb
RDSR WRSR READ FAST_READ
SI SO SCK CSb
Page Program PE SE BE SP
Figure 9. SPI Serial Interface
RES 1010 1011 +3 dummy bytes READ_ID 1010 1011 +3 dummy bytes
SA25F020 Advanced Information SAIFUN
18
In addition to the instruction register, the device also contains an 8-bit status register that can be accessed by RDSR and WRSR instructions. The byte defines the Block Write Protection (BP1 and BP0) levels, Write Enable (WEN) status, Busy/Rdy (/RDY) status and Hardware Write Protect (WPBEN) status of the device. Table 7 illustrates the format of the status register.
Table 7. Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit1 Bit 0
Bit 7 (WPBEN) is Hardware Write Protect mode. If this bit is a 1, this mode is enabled and the status register is write protected. Bits 6 through 4 are always 0. Bit 3 (BP1) and Bit 2 (BP0) together indicate a Block Write Protection previously sent to the device. Bits 0 and 1 are 1 during an internal write cycle. Bit 1 (WEN) indicates the Write Enable status of the device. This bit is read by executing an RDSR instruction. If this bit is 1, the device is write enabled; if it is 0, it is write disabled. Bit 0 (/RDY) indicates the Busy/Ready status of the device. This bit is a read-only bit and is read by executing an RDSR instruction. If this bit is 1, the device is busy doing a Program or Erase cycle; if it is 0, the device is ready.
WPBEN
X
X
X
BP1
BP0 WEN /RDY
Read Status Register (RDSR)
The RDSR instruction provides read access to the status register. The BUSY/RDY and WREN statuses of the device can also be determined by this instruction. In addition, the Block Write Protection bits indicate the extent of protection employed. In order to determine the status of the device, the value of the /RDY bit can be continuously polled before sending any write instruction.
Table 8. Read Status Register Definition
Bit Definition Bit 0 = 0 (/RDY) indicates that the device is READY. Bit 0 = 1 indicates that a write cycle is in progress. Bit 1 = 0 indicates that the device is not write enabled. Bit 1 = 1 indicates that the device is write enabled. Block Write Protect Bit 0 Block Write Protect Bit 1 Write Protect Mode Enable Bit
Bit 0 (/RDY)
Bit 1 (WEN) Bit 2 (BP0) Bit 3 (BP1) Bit 7 (WPBEN)
SA25F020 Advanced Information SAIFUN
19
The RDSR command requires the following sequence: 1. The CSb pin is pulled low to select the device and the RDSR opcode is transmitted on the SI pin.
2. The data on the SI pin becomes Don't Care. 3. The data from the status register is shifted out on the SO pins, with the D7 bit first and the D0 bit last, as shown in Figure 10.
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Instruction
SI Status Register Out SO High Impedance 7 MSB 6 5 4 3 2 1 0 7 MSB 6 Status Register Out 5 4 3 2 1 0 7 MSB
Figure 10. Read Status Register (RDSR) Instruction Sequence
SA25F020 Advanced Information SAIFUN
20
Write Enable (WREN)
The device powers up in the Write Disable state when VCC is applied. All programming instructions must be preceded by a WREN instruction. The instruction sequence is shown in Figure 11, with SO in high impedance.
Write Disable (WRDI)
To protect the device against inadvertent writes, the WRDI instruction disables all programming modes. The WRDI instruction is independent of the WP pin's status. The WREN instruction should be executed after the WRDI instruction to re-enable all programming modes. The instruction sequence is shown in Figure 12, with SO in high impedance.
CS
0 SCK
1
2
3
4
5
6
7
Instruction
SI
Figure 11. Write Enable (WREN) Instruction Sequence
CS
0 SCK
1
2
3
4
5
6
7
Instruction
SI
Figure 12. Write Disable (WRDI) Instruction Sequence
SA25F020 Advanced Information SAIFUN
21
Write Status Register (WRSR)
The WRSR instruction enables the user to select one of four levels of protection. The SA25F020 is divided into four array segments. The top quarter, top half or all of the memory segments can be protected (for more details, refer to Table 9). The data within a selected segment is therefore read-only.
Table 9. Block Write Protect Bits
Level Status Register Bits BP1 0 1/4 1/2 All 0 0 1 1 BP0 0 1 0 1 Array Addresses Protected None 30000 - 3FFFF 20000 - 3FFFF 00000 - 3FFFF
Table 10. WPBEN Operation
WPb WPBEN WEN
X X Low Low High High 0 0 1 1 X X 0 1 0 1 0 1
UnProtected Status protected Blocks Register Blocks
Protected Protected Protected Protected Protected Protected Protected Writeable Protected Writeable Protected Writeable Protected Writeable Protected Protected Protected Writeable
The WRSR instruction is enabled: 1. When the WPb pin is held high and the device has been previously write enabled via the WREN instruction. 2. When the WPb pin is held low, the WPBEN bit is 0 and the device has been previously write enabled via the WREN instruction.
The WRSR instruction (as shown in Table 10) also allows the user to enable or disable the WPb pin via the WPBEN bit. Hardware write protection is enabled when the WPb pin is low and the WPBEN bit is 1, and disabled when either the WP pin is high or the WPBEN bit is 0. When the device is hardware write protected, writes to the status register are disabled.
NOTE:
When the WPBEN bit is hardware write protected, it cannot be changed back to 0 while the WPb pin is held low.
SA25F020 Advanced Information SAIFUN
22
The WRSR command following sequence:
requires
the
1. The CSb pin is pulled low to select the device.
2. The WRSR opcode is then transmitted on the SI pin, followed by the data to be programmed. The instruction sequence is shown in Figure 13.
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Instruction
Status Register In
SI
7 MSB
6
5
4
3
2
1
0
SO
High Impedance
Figure 13. Write Status Register (WRSR) Instruction Sequence
SA25F020 Advanced Information SAIFUN
23
Read Data Bytes (READ)
Reading the memory via the serial SPI link requires the following sequence: 1. After the CSb line is pulled low to select the device, the READ opcode is transmitted via the SI line, followed by the 3-byte address to be read (address bits A23 to A18 are Don't Care). 2. Upon completion, any data on the SI line is ignored. 3. The data (D7-D0) at the specified address is then shifted out onto the SO line. Each bit is shifted out at a maximum SCK frequency of FSCK.
If only one byte is to be read, the CSb line should be driven high after the data comes out. The READ sequence can be continued, as the byte address is automatically incremented and data continues to shift out. When the highest address is reached, the address counter rolls over to the lowest address, enabling the entire memory to be read in one continuous READ cycle. The instruction sequence is shown in Figure 14. Driving CSb high terminates the READ instruction, which can be done at any time during data output. Any READ instruction executed while an Erase, Program or WRSR cycle is in progress is rejected without having any effect on the cycle in progress.
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
28
29
30
31
32
33
34
35
36
37
38 39
Instruction
24-Bit Address 23 22 21 3 2 1 0 DATA OUT 1 DATA OUT 2 1 0 7 MSB
SI High Impedance
SO
7 MSB
6
5
4
3
2
Figure 14. Read (READ) Instruction Sequence
SA25F020 Advanced Information SAIFUN
24
Fast Read (FAST_READ)
The Fast Read instruction is included in the device in order for it to be compatible with other SPI Flash devices. Both the READ and FAST_READ instructions read the memory at the specified SCK frequency (FSCK), with a maximum speed of 25 MHz. Reading the memory via the serial SPI link requires the following sequence: 1. After the CSb line is pulled low to select the device, the READ opcode is transmitted via the SI line, followed by the 3-byte address and a dummy byte (address bits A23 to A18 are Don't Care). 2. Upon completion, any data on the SI line is ignored.
3. The data (D7-D0) at the specified address is then shifted out onto the SO line. Each bit is shifted out at a maximum frequency of FSCK. If only one byte is to be read, the CSb line should be driven high after the data comes out. The READ sequence can be continued, as the byte address is automatically incremented and data continues to shift out. When the highest address is reached, the address counter rolls over to the lowest address, enabling the entire memory to be read in one continuous READ cycle. The instruction sequence is shown in Figure 15. Driving CSb high terminates the FAST_READ instruction, which can be done at any time during data output. Any FAST_READ instruction executed while an Erase or Program cycle is in progress is rejected without having any effect on the cycle in progress.
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Instruction SI High Impedance 23 22 21
24-Bit Address 3 2 1 0 7 6
Dummy Byte 5 4 3 2 1 0 DATA OUT 1 7 MSB 6 5 4 3 2 1 0 7 MSB DATA OUT 2
SO
Figure 15. Fast Read (FAST_READ) Instruction Sequence
SA25F020 Advanced Information SAIFUN
25
Page Programming (PP)
The PP instruction allows bytes to be programmed in the memory (changing bits from 1 to 0). In order to program to the SA25F020, two separate instructions must be executed. The device must first be write enabled via the WREN instruction, and then a PP sequence (which consists of four bytes plus data) may be executed. The address of the memory locations to be written must be outside the protected address field location selected by the Block Write Protection level. During an internal Program cycle, all commands are ignored except the RDSR instruction. A PP instruction requires the following sequence: *= After the CSb line is pulled low to select the device, the PP opcode is transmitted via the SI line, followed by the byte address and the data (D7-D0) to be written. Programming starts after the CSb pin is brought high. The CSb pin's low-to-high transition must occur during the SCK low time, immediately after the clock in the D0 (LSB) data bit. The instruction sequence is shown in Figure 16, page 26.
As soon as CSb is driven high, the self-timed PP cycle (whose duration is defined as TPP) is initiated. While the Page Program cycle is in progress, the status register may be read to check the value of the Write in Progress (/RDY) bit. The /RDY bit is 1 during the self-timed Page Program cycle, and 0 when it is completed. The Write Enable Latch (WEN) bit is reset at some unspecified time before the cycle is completed. The SA25F020's PP operation is capable of up to a 256-byte programming, from 1 to 256 bytes at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of memory. After each byte is received, the eight low-order address bits are internally incremented by one. If more than 256 bytes of data are transmitted, the address counter rolls over and the previously written data is overwritten. The SA25F020 is automatically returned to the write disable state at the completion of a Write cycle.
NOTES:
1. If the device is not write enabled, the device ignores the PP instruction and returns to the standby state when CSb is brought high. A new CSb falling edge is required to re-initiate the serial communication. 2. A PP instruction applied to a page that is protected by the Block Protect (BP1, BP0) bits (as described in Table 8, page 18, and Table 9, page 21) is not executed.
SA25F020 Advanced Information SAIFUN
26
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
Instruction SI 23 22 21 MSB
24-Bit Address 3 2 1 0 7 MSB 6
Data Byte 1 5 4 3 2 1 0
CS 2072 2073 2074 2075 2076 2077 2078 1 40 41 42 43 44 45 46 47 48 49 59 51 52 53 54 55 SCK Data Byte 2 SI 7 MSB 6 5 4 3 2 1 0 7 MSB 6 5 Data Byte 3 4 3 2 1 0 7 MSB 6 Data Byte 256 5 4 3 2 0 2079
Figure 16. Page Programming (PP) Instruction Sequence
SA25F020 Advanced Information SAIFUN
27
Page Erase (PE)
The PE instruction sets all 256 bytes in the selected page to 1. Before it can be executed, two separate instructions must be carried out. The device must first be write enabled via the WREN instruction, and then a PE sequence, which consists of one opcode byte and three data bytes may be executed. The address of the memory locations to be written must be inside the page to be erased and outside the protected address field location selected by the Block Write Protection level. During an internal PE cycle, all commands are ignored except the RDSR instruction. A PE instruction requires the following sequence: 1. After the CSb line is pulled low to select the device, the PE opcode is transmitted via the SI line, followed by the 3-byte address. 2. Erasing begins after the CSb pin is brought high. The CSb pin's low-to-high transition must occur during the SCK low time, immediately after the clock in the last address bit.
CS
As soon as CSb is driven high, the self-timed PE cycle (whose duration is defined as TPE) is initiated. While the PE cycle is in progress, the status register may be read to check the value of the /RDY bit. The /RDY bit is 1 during the self-timed PE cycle, and 0 when it is completed. The WEN bit is reset at some unspecified time before the cycle is completed. The instruction sequence is shown in Figure 17. The SA25F020 is automatically returned to the Write Disable state at the completion of a PE cycle.
NOTES:
1. If the device is not write enabled, the device ignores the PE instruction and returns to the standby state when CSb is brought high. A new CSb falling edge is required to re-initiate the serial communication. 2. A PE instruction applied to a page that is protected by the Block Protect (BP1, BP0) bits (as described in Table 8, page 18, and Table 9, page 21) is not executed.
0 SCK
1
2
3
4
5
6
7
8
9
10
28 29 30 31
Instruction SI
24 Bit Address 23 22 21 MSB 3 2 1 0
Figure 17. Page Erase (PE) Instruction Sequence
SA25F020 Advanced Information SAIFUN
28
Sector Erase (SE)
The SE instruction sets all 512 Kb in the selected sector to 1. Before it can be executed, two separate instructions must be carried out. The device must first be write enabled via the WREN instruction, and then a SE sequence, which consists of four bytes, may be executed. The address of the memory locations to be written must be inside the sector to be erased and outside the protected address field location selected by the Block Write Protection level. During an internal SE cycle, all commands are ignored except the RDSR instruction. A SE instruction requires the following sequence: 1. After the CSb line is pulled low to select the device, the SE opcode is transmitted via the SI line, followed by the 3-byte address. Erasing begins after the CSb pin is brought high. The CSb pin's low-to-high transition must occur during the SCK low time, immediately after the clock in the last address bit.
CS
As soon as CSb is driven high, the self-timed SE cycle (whose duration is defined as TSE) is initiated. While the SE cycle is in progress, the status register may be read to check the value of the /RDY bit. The /RDY bit is 1 during the self-timed SE cycle, and 0 when it is completed. The WEN bit is reset at some unspecified time before the cycle is completed. The instruction sequence is shown in Figure 18. The SA25F020 is automatically returned to the write disable state at the completion of an SE cycle.
NOTES:
1. If the device is not write enabled, the device ignores the SE instruction and returns to the standby state when CSb is brought high. A new CSb falling edge is required to re-initiate the serial communication. 2. A SE instruction applied to a sector that is protected by the Block Protect (BP1, BP0) bits (as described in Table 8, page 18, and Table 9, page 21) is not executed.
2.
0 SCK
1
2
3
4
5
6
7
8
9
10
28 29 30 31
Instruction SI
24 Bit Address 23 22 21 MSB 3 2 1 0
Figure 18. Sector Erase (SE) Instruction Sequence
SA25F020 Advanced Information SAIFUN
29
Bulk Erase (BE)
The BE instruction sets all bits in the memory array to 1. Before it can be executed, two separate instructions must be carried out. The device must first be write enabled via the WREN instruction, and then a BE sequence, which consists of four bytes plus data, may be executed. The address of the memory locations to be written must be outside the protected address field location selected by the Block Write Protection level. During an internal BE cycle, all commands are ignored except the RDSR instruction. A BE instruction requires the following sequence: 1. After the CSb line is pulled low to select the device, the BE opcode is transmitted via the SI line. 2. Erasing begins after the CSb pin is brought high. The CSb pin's low-to-high transition must occur during the SCK low time, immediately after the clock in the last opcode bit.
CS
As soon as CSb is driven high, the self-timed BE cycle (whose duration is defined as TBE) is initiated. While the BE cycle is in progress, the status register may be read to check the value of the /RDY bit. The /RDY bit is 1 during the self-timed BE cycle, and 0 when it is completed. The WEN bit is reset at some unspecified time before the cycle is completed. The instruction sequence is shown in Figure 19. The SA25F020 is automatically returned to the Write Disable state at the completion of a BE cycle.
NOTES:
1. If the device is not write enabled, the device ignores the BE instruction and returns to the standby state when CSb is brought high. A new CSb falling edge is required to re-initiate the serial communication. 2. A BE instruction can be applied only if both Block Protect (BP1, BP0) bits (as described in Table 8, page 18, and Table 9, page 21) are 0.
0 SCK
1
2
3
4
5
6
7
Instruction
SI
Figure 19. Bulk Erase (BE) Instruction Sequence
SA25F020 Advanced Information SAIFUN
30
Software Protection (SP)/ Deep Powerdown (DP)
The DP instruction is included in the device in order to be compatible with other SPI Flash devices, and is identical to the SP instruction. The SA25F020's low standby current of 1 A is the same in both DP and Standby modes. It is recommended that the standard Standby mode be used for the lowest power current draw, as well as an extra SP mechanism while the device is not in active use. This is due to the fact that while in this mode, the device ignores all Write, Program and Erase instructions. The SP instruction is entered by driving CSb low, followed by the instruction code on the SI pin. CSb must be driven low for the entire duration of the sequence. The instruction sequence is shown in Figure 20.
CSb must be driven high after the eighth bit of the instruction code has been latched in; otherwise, the SP instruction is not executed. As soon as CSb is driven high, it requires a delay of tDP before SP mode is entered. Once the device has entered SP mode, all instructions are ignored except the Release from Software Protect and Read Electronic Signature (RES) instructions, which release the device from this mode. RES instructions also enable the Electronic Signature to be read on the SO pin. SP mode automatically stops at powerdown, and the device always powers up in the Standby mode. Any SP instruction executed while an Erase, Program or WRSR cycle is in progress is rejected without having any effect on the cycle in progress.
CS
tDP 0 SCK Instruction 1 2 3 4 5 6 7
SI
Standby Mode
Software Protect Mode
Figure 20. Software Protection Instruction Sequence
SA25F020 Advanced Information SAIFUN
31
Release from Software Protect (RES)
Once the device has entered SP mode, all instructions are ignored except the RES mode. Any RES instruction executed while an Erase, Program or Write Status Register cycle is in progress is not decoded, and has no effect on the cycle that is in progress. The device is first selected by driving CSb low, followed by an 8-bit instruction byte, with each bit being latched in on SI during the rising edge of SCK.
CS
Driving CSb high after the 8-bit instruction byte has been received by the device, but before the whole of the 8-bit Electronic Signature has been transmitted for the first time (as shown in Figure 21), will still ensure that the device is put into Standby mode. The transition to Standby mode is delayed by tRES, and CSb must remain high for at least tRES(max), as specified in Table 4 on page 10. Once in Standby mode, the device waits to be selected, so that it can receive, decode and execute instructions.
0 SCK
1
2
3
4
5
6
7 tRES
Instruction
SI
Software Protect Mode
Standby Mode
Figure 21. Release from Software Protect (RES) Instruction Sequence
SA25F020 Advanced Information SAIFUN
32
Release from Software Protection and Read Electronic Signature (RES)
Once the device has entered SP mode, all instructions are ignored except the RES mode. The instruction can also be used to read the 8-bit Electronic Signature of the device on the SO pin. The RES instruction always provides access to the Electronic Signature of the device (except while an Erase, Program or Write Status Register cycle is in progress), and can be applied even if SP mode has not been entered. Any RES instruction executed while an Erase, Program or Write Status Register cycle is in progress is not decoded, and has no effect on the cycle in progress. This instruction serves a second purpose as well. The device features an 8-bit Electronic Signature, whose value for the SA25F020 is 11h. This can be read using the RES instruction.
CS
The device is first selected by driving CSb low. The instruction code is followed by three dummy bytes, each bit being latched in on SI during the rising edge of SCK. The 8-bit Electronic Signature, which stored in the memory, is then shifted out on SO, with each bit being shifted out during the falling edge of SCK. The instruction sequence is shown in Figure 22. Driving CSb high after the Electronic Signature has been read at least once terminates the RES instruction. Sending additional clock cycles on SCK, while CSb is driven low causes the Electronic Signature to be output repeatedly. When CSb is driven high, the device is put into Standby mode. The transition to Standby mode is delayed by tRES, and CSb must remain high for at least tRES(max), as specified in Table 4 on page 10. Once in Standby mode, the device waits to be selected, so that it can receive, decode and execute instructions.
0 SCK
1
2
3
4
5
6
7
8
9
10
28
29
30 31
32
33
34
35 36
37
38
39
Instruction SI High Impedance 23 22 21 MSB SO
3 Dummy Bytes 3 2 1 0 Electonic ID 7 MSB Software Protect Mode 6 5 4 3 2 1 0
tRES
Standby Mode
Figure 22. Release from Software Protection and Read Electronic Signature (RES) Instruction Sequence
SA25F020 Advanced Information SAIFUN
33
Powerup and Powerdown
The device must not be selected at powerup or powerdown (that is, CSb must follow the voltage applied on VCC) until VCC reaches the correct value, as follows: *= VCC(min) at powerup, and then for a further delay of tPU (as described in Table 11) *= VSS at powerdown A simple pull-up resistor on CSb can usually be used to insure safe and proper powerup and powerdown. To avoid data corruption and inadvertent write operations during powerup, a Power On Reset (POR) circuit is included. The logic inside the device is held at reset while VCC is less than the POR threshold value (VPOR), all operations are disabled and the device does not respond to any instructions. The device ignores all instructions until a time delay of tPU has elapsed after the moment that VCC rises above the VWI threshold. However, correct operation of the device is not guaranteed if by this time VCC is still below VCC(min). No Write Status Register, Program or Erase instructions should be sent until tPU reaches the minimum VCC threshold after VCC.
At powerup, the device is in Standby mode (not SP mode) and the WEN bit is reset. Normal precautions must be taken for supply rail decoupling to stabilize the VCC feed. Each device in a system should have the VCC rail decoupled by a suitable capacitor close to the package pins (this capacitor is generally of the order of 0.1 F). All operations are disabled and the device does not respond to any instructions when VCC drops at powerdown from the operating voltage to below the VPOR threshold. (The designer must be aware that if a powerdown occurs while a Write, Program or Erase cycle is in progress, data corruption can result.)
Table 11. Powerup
Symbol
VPOR tPU
Parameter
POR Threshold Value VCC(min) to CS low
Min.
2.2 2
Max.
2.4
Unit
V ms
SA25F020 Advanced Information SAIFUN
34
Physical Dimensions
All measurements are in inches (millimeters), unless otherwise specified.
Figure 23. 8-pin SOIC Package
SA25F020 Advanced Information SAIFUN
35
Figure 24. 8-pin MLF Leadless Package
SA25F020 Advanced Information SAIFUN
36
Figure 25. Molded Dual-in-line Package (N) Package Number N08E
SA25F020 Advanced Information SAIFUN
37
Contact Information
International Headquarters
Saifun Semiconductors Ltd. ELROD Building 45 Hamelach St. Sappir Industrial Park Netanya 42504 Israel Tel.: +972-9-892-8444 Fax: +972-9-892-8445 Email: tech_support@saifun.com http://www.saifun.com
United States
Saifun Semiconductors Inc. 2350 Mission College Blvd. Suite 1070 Santa Clara, CA 95054 U.S.A.
Tel: +1-408-982-5888 Fax: +1-408-982-5890
Revision History
Rev Date Description of Change
0.0 1.0
26-May-03 24-Jul-03
Initial Release Modified Ordering Information
(c) Saifun Semiconductors Ltd. 2003 Saifun reserves the right, without notice, to change any of the products described in this guide, in order to improve functionality, reliability or design. Saifun assumes no liability arising from the application or use of any product described in this guide; and under its patent rights, gives no authorization for the use of this product or associated products. The Buyer will not hold Saifun responsible for direct or indirect damages and expenses, as well as any claim of injury or death, associated with the unauthorized use, including claims of manufacture or design negligence. Saifun and Saifun NROM are trademarks or registered trademarks of Saifun Semiconductors Ltd. Other company and brand products and service names are trademarks or registered trademarks of their respective holders.
Life Support Policy
Saifun's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President of Saifun Semiconductors Ltd. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

▲Up To Search▲

Price & Availability of SA25F020LEM8

	To Download SA25F020LEM8 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .